The main difference between the construction of DE-MOSFET and that of E-MOSFET, as we see from the figures given below the E-MOSFET substrate extends When drain is applied with positive voltage with respect to source and no potential is applied to the gate two N-regions and one P-substrate from two P-N junctions connected back to back with a resistance of the P-substrate.
So a very small drain current that is, reverse leakage current flows.
However it does follow a similar “square law type” of relationship.
The equation for the transfer characteristic of E-MOSFETs is given as:, the E-MOSFET is OFF because there is no conducting channel between source and drain.
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E-MOSFET is classified as an enhancement-mode device because its conductivity depends on the action of the inversion layer.
Depletion-mode devices are normally ON when the gate-source voltage V is controlled by the gate voltage.